US Patent Issued to Teikyo University on Nov. 3 for "Quantum device" (Japanese Inventor)

Posted On: 2026-11-03

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,391, issued on Nov. 3, was assigned to Teikyo University (Tokyo). "Quantum device" was invented by Tetsufumi Tanamoto (Utsunomiya, Japan). ... Read More

US Patent Issued to GLOBALWAFERS on Nov. 3 for "Buffer layer structure to improve GaN semiconductors" (Taiwanese Inventors)

Posted On: 2026-11-03

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ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,392, issued on Nov. 3, was assigned to GLOBALWAFERS Co. LTD. (Hsinchu, Taiwan). "Buffer layer structure to improve GaN semiconductors" was i... Read More

US Patent Issued to FUJI ELECTRIC, DENSO on Nov. 3 for "Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device" (Japanese Inventors)

Posted On: 2026-11-03

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ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,394, issued on Nov. 3, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan) and DENSO Corp. (Kariya-city, Japan). "Method of manufacturi... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device including two-dimensional material and method of fabricating the same" (South Korean Inventors)

Posted On: 2026-11-03

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ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,395, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including two-dimensio... Read More

US Patent Issued to XIAMEN SAN'AN INTEGRATED CIRCUIT on Nov. 3 for "Group III-V compound semiconductor device and passivation structure adapted therein" (Chinese Inventors)

Posted On: 2026-11-03

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ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,396, issued on Nov. 3, was assigned to XIAMEN SAN'AN INTEGRATED CIRCUIT Co. LTD. (Fujian, China). "Group III-V compound semiconductor device... Read More

US Patent Issued to Genettice (Qingdao) Semiconductor Materials on Nov. 3 for "Enhanced GaN-based HEMT device, device epitaxy, and preparation methods thereof" (Chinese Inventors)

Posted On: 2026-11-03

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ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,397, issued on Nov. 3, was assigned to Genettice (Qingdao) Semiconductor Materials Co. Ltd. (Qingdao City, China). "Enhanced GaN-based HEMT ... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

Posted On: 2026-11-03

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ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,398, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and manufact... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "STI loss mitigation by radical oxidation treatment" (Taiwanese Inventors)

Posted On: 2026-11-03

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ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,399, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "STI loss mitigation by radical oxidat... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device" (South Korean Inventor)

Posted On: 2026-11-03

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ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,400, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Hojun Ki... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACUTRING on Nov. 3 for "Shape of core gate electrode of semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

Posted On: 2026-11-03

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ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,401, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACUTRING COMPANY LTD. (Hsinchu, Taiwan). "Shape of core gate electrode of s... Read More

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US Patent Issued to Teikyo University on Nov. 3 for "Quantum device" (Japanese Inventor)

US Patent Issued to GLOBALWAFERS on Nov. 3 for "Buffer layer structure to improve GaN semiconductors" (Taiwanese Inventors)

US Patent Issued to FUJI ELECTRIC, DENSO on Nov. 3 for "Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device" (Japanese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device including two-dimensional material and method of fabricating the same" (South Korean Inventors)

US Patent Issued to XIAMEN SAN'AN INTEGRATED CIRCUIT on Nov. 3 for "Group III-V compound semiconductor device and passivation structure adapted therein" (Chinese Inventors)

US Patent Issued to Genettice (Qingdao) Semiconductor Materials on Nov. 3 for "Enhanced GaN-based HEMT device, device epitaxy, and preparation methods thereof" (Chinese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "STI loss mitigation by radical oxidation treatment" (Taiwanese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device" (South Korean Inventor)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACUTRING on Nov. 3 for "Shape of core gate electrode of semiconductor device structure and methods of forming the same" (Taiwanese Inventors)